Transistor: N-MOSFET; Trench; unipolar; 60V; 0.17A; Idm: 0.9A; 0.31W

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Availability

8802 pcs

Index:

2N7002NXBKR

Product info ID:

778285

Manufacturer

NEXPERIA

Details

Transistor: N-MOSFET; Trench; unipolar; 60V; 0.17A; Idm: 0.9A; 0.31W

Transistor type	N-MOSFET
Polarisation	unipolar
Drain-source voltage	60V
Drain current	0.17A
Pulsed drain current	0.9A
Power dissipation	0.31W
Case	SOT23 , TO236AB
Gate-source voltage	±20V
On-state resistance	5.7Ω
Mounting	SMD
Gate charge	1nC
Package type	reel , tape
Channel kind	enhancement
Technology	Trench
Variant	ESD

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Product info ID: 778285

Transistor: N-MOSFET; Trench; unipolar; 60V; 0.17A; Idm: 0.9A; 0.31W

Details

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