Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3; ESD
| Transistor type | N-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | 500V |
| Drain current | 2.7A |
| Power dissipation | 70W |
| Case | TO220-3 |
| Gate-source voltage | ±30V |
| On-state resistance | 1.5Ω |
| Gate-source voltage | ±30V |
| Mounting | THT |
| Package type | tube |
| Channel kind | enhancement |
| Variant | ESD |
| Technology | SuperMesh™ |
| Features of semiconductor devices | ESD protected gate |