Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
| Transistor type | N-MOSFET |
| Technology | MDmesh™ V |
| Polarisation | unipolar |
| Drain-source voltage | 650V |
| Drain current | 20.8A |
| Power dissipation | 190W |
| Case | TO220-3 |
| Gate-source voltage | ±25V |
| Gate-source voltage | ±25V |
| On-state resistance | 79mΩ |
| Mounting | THT |
| Package type | tube |
| Channel kind | enhancement |
| Features of semiconductor devices | ESD protected gate |
| Variant | ESD |