Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
| Transistor type | P-MOSFET x2 |
| Polarisation | unipolar |
| Drain-source voltage | -30V |
| Drain current | -2A |
| Power dissipation | 0.5W |
| Case | PG-TSOP-6 |
| Gate-source voltage | ±20V |
| On-state resistance | 80mΩ |
| Gate-source voltage | ±20V |
| Mounting | SMD |
| Channel kind | enhancement |
| Variant | ESD |
| Features of semiconductor devices | ESD protected gate |
| Technology | OptiMOS™ P3 |