Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
| Transistor type | P-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | -200V |
| Drain current | -32A |
| Power dissipation | 300W |
| Case | TO220AB |
| Gate-source voltage | ±15V |
| On-state resistance | 0.13Ω |
| Gate-source voltage | ±15V |
| Mounting | THT |
| Gate charge | 185nC |
| Package type | tube |
| Channel kind | enhancement |
| Reverse recovery time | 190ns |
| Technology | TrenchP™ |