Transistor: P-MOSFET; unipolar; -30V; -2A; 900mW; SOT23; ESD
| Transistor type | P-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | -30V |
| Power | 900mW |
| Drain current | -2A |
| Power dissipation | 0.9W |
| Case | SOT23 |
| Gate-source voltage | ±20V |
| Gate-source voltage | ±20V |
| On-state resistance | 95mΩ |
| Mounting | SMD |
| Channel kind | enhancement |
| Variant | ESD |
| Gate charge | 2.2nC |
| Features of semiconductor devices | ESD protected gate |