Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W

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30 pcs

Index:

S3M0025120B-SMC

Product info ID:

1960088

Manufacturer

SMC DIODE SOLUTIONS

Details

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W

Transistor type	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	52A
Pulsed drain current	200A
Power dissipation	394W
Case	T2PAK
Gate-source voltage	-4...18V
On-state resistance	36mΩ
Mounting	SMD
Gate charge	175nC
Package type	tube
Channel kind	enhancement
Features of semiconductor devices	Kelvin terminal

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Product info ID: 1960088

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 200A; 394W

Details

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