Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
| Transistor type | N-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 33A |
| Pulsed drain current | 85A |
| Power dissipation | 250W |
| Case | TO247-3 |
| Gate-source voltage | -4...18V |
| On-state resistance | 65mΩ |
| Mounting | THT |
| Package type | tube |
| Channel kind | enhancement |
| Gate-source voltage | -4...18V |
| Gate charge | 60nC |
| Technology | SiC |