Transistor: N-MOSFET; unipolar; 500V; 6.3A; 30W; TO220FP; ESD
| Transistor type | N-MOSFET |
| Technology | SuperMesh™ |
| Polarisation | unipolar |
| Drain-source voltage | 500V |
| Drain current | 6.3A |
| Power dissipation | 30W |
| Case | TO220FP |
| Gate-source voltage | ±30V |
| Gate-source voltage | ±30V |
| On-state resistance | 0.52Ω |
| Mounting | THT |
| Package type | tube |
| Channel kind | enhancement |
| Variant | ESD |
| Features of semiconductor devices | ESD protected gate |