Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
| Transistor type | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 46A |
| Power dissipation | 278W |
| Case | TO247-4 |
| Gate-source voltage | -4...18V |
| On-state resistance | 65mΩ |
| Mounting | THT |
| Package type | tube |
| Channel kind | enhancement |
| Gate charge | 121nC |
| Features of semiconductor devices | Kelvin terminal |
| Pulsed drain current | 100A |